IEEE EDS Japan Chapter 会員各位
IEEE EDS Kansai Chapter 会員各位
IEEE Electron Devices Society Japan Chapter
Chair 木村 紳一郎
Vice Chair 鳥海 明
DL(Distinguished Lecturer)講演会のお知らせ
IEEE EDS Distinguished Lecturerの
Chun Yen Chang教授(President Emeritus, National Chiao Tung
University,台湾)ならびにEdward Yi Chang 教授(National Chiao Tung University, 台湾)による下記のDL講演会を開催致します。
皆様のご参加を頂きたくご案内申し上げます。
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【日 時】平成23年12月19日(月)
Chun Yen Chang教授:午後3時〜4時
Edward Yi Chang教授:午後4時〜5時
【会 場】東京工業大学すずかけ台キャンパス
S2棟7階 会議室
(横浜市緑区長津田町4259、最寄り駅:東急田園都市線すずかけ台駅)
会場地図は下記サイトをご参照下さい。
http://www.titech.ac.jp/about/campus/s_map.html
【講演者】
* Chun Yen Chang教授(President Emeritus, National Chiao Tung University
台湾)
* Edward Yi Chang 教授(National Chiao Tung University 台湾)
【タイトル】
* Chun Yen Chang教授
The first RT CW GaN
VCSEL and various High Efficiency LED
* Edward Yi Chang教授
III-V InAs
Quantum-Well FETs for Future High-Speed and Beyond Moor’s Law Logic
Applications
【概要】
* Chun Yen Chang教授
Recently, we have successfully demonstrated the achievement of first continuous wave mesa type (CW) current injection of GaN-based VCSEL with hybrid mirrors at room temperature for the first time at 412 nm. In addition, we can defeat “Droop” and”QCSE” - the ways that the efficiency falls dramatically. The efficiency droop in InGaN-based UV LED with AlGaN and InAlGaN barrier was investigated in our laboratory. We proposed a new method to grow high-quality non-polar GaN layers on GaN nano-rods on sapphire substrate which significantly reduced thread dislocation density from 1012 to 1010 which is feasible to make high efficiency and high brightness LED.
* Edward Yi Chang
Recently, III-V Quantum-Well Field Effect
Transistors (QWFET) have emerged as the most potential technology of choice for
future THz and high-speed, low-voltage logic applications beyond Si-CMOS. In
fact, the excellent RF-performance has been demonstrated using InAlAs/InxGa1-xAs HEMTs on InP
substrate. In this talk, high performance InxGa1-xAs-channel QWFETs were fabricated
and evaluated for RF and low-power logic applications. Superior current density
of 1015 mA/mm was achieved with an extremely high transconductance of 1900 mS/mm at
VDS = 0.5 V, it indicates that the In-rich InxGa1-xAs-channel QWFETs can be
biased at a low supply voltage to reduce overall dc power consumption, while
maintaining relatively high current density and gm. The current gain cutoff frequency
(fT) and maximum oscillation frequency (fmax) of the device were extracted to be 393 GHz and 260
GHz at low VDS of 0.5 V, respectively. Interestingly, an extremely high fT of 663 GHz was achieved for the InAs-channel
QW transistor when the device was biased near the occurrence of impact
ionization. For the logic characteristics, a low calculated gate delay (CV/I)
of 0.54 psec was also achieved at VDS = 0.5 V due to
the superior transport properties of the InAs
channel. The Drain Induced Barrier Lowering and sub-threshold slope were
calculated to be 200 mV/V and 115 mV/dec,
respectively. Compared to advanced silicon device, the QWFETs exhibited better
RF performance with lower DC power consumption which indicates the great
potential of the III-V based device for high-speed and low-voltage digital
applications in post-CMOS generations. Besides, the electrical properties of
Al2O3/n-InxGa1-xAs MOS capacitors with different In content are also
investigated. Higher In content materials usually have lower band gap, higher
electron mobility and higher intrinsic carrier density. These properties lead to
the different electrical properties for the Al2O3/InxGa1-xAs structures. Result
shows small C-V frequency dispersion in accumulation (< 1% per decade).
Shorter minority carrier response time and
smaller C-V hysteresis are observed for the InxGa1-xAs materials with the
increase of In content. The Dit profile shows low
interface density located in the electron affinity range 4.5 eV (In0.53Ga0.47As) to 4.9 eV (InAs). The influence of holes and electrons tunnelling on the increase of leakage current with the
increase of In content is also discussed.
【略歴】
* Chun Yen Chang教授
Prof. Chang served as President in NCTU for
8 years (1998-2006) and is National-Endowed-Chair Professor now. He received
the IEEE life fellow (1987) and the IEEE third millennium medal in 2000. He is
a member of Academia Sinica (1996) and Foreign
Associate of the National Academy of Engineering, U.S.A (2000). He is the
recipients of the Nikkei Asia Prize for science 2007 from Japan, and is also
regarded as “the patriarch of Taiwan Semiconductor". In 1964, he and his
colleagues established the nation first and the full facilities of Si planar
technology research center at NCTU where they made the nation’s first Si planar
transistor (1965), the first IC,MOSFET (1966) and surface stabilization and
subsequently attracted worldwide attentions in MOS researches including Dwang Khang, G.L. Pearson,
F.FANG, etc. and strongly forms the foundation of Taiwan
Hi-tech development. For his continuous
devotion, many of his students have since become founders of Hi-Tech
enterprises and world renowned scientists.
* Edward Yi Chang
Dr. Edward Y. Chang received his B.S.
degree from Materials Science and Engineering, National Tsing
Hua University, Hsinchu,
Taiwan in 1977 and his Ph.D. degree from Materials Science and Engineering, University
of Minnesota Minneapolis, MN in 1985. Prior to join National Chiao-Tung University (NCTU), Dr. Chang was with Unisys Corporation
GaAs Component Group, Eagan, MN, 1985 to 1988 and
Comsat Labs Microelectronic Group from 1988 to 1992. In 1995, he founded Hexawave Inc., Hainchu, Taiwan,
the first GaAs MMIC mass production
facility in Taiwan. He has held a faculty
position in NCTU since 1999. He is now the Professor of the Department of
Materials Science and Engineering and the professor of the Deparment
of Eletronics Engineering at NCTU. Currently he is
also the Dean of Research and Development at NCTU. Dr. Chang has more than 25
years’ solid experience in III-V Compound Semiconductor related area with abalanced technology coverage from
device, fabrication and materials growth,
specializing in ultra high frequency devices. He has developed several
pioneered technologies In III-V technologies including: (1) Demonstration of
the growth of the AlGaSb/InAs
high-electron-mobility transistor epitaxial structure on the Si substrate with
very high room-temperature electron mobility of 27,300 cm2/Vs, which is the
highest mobility ever reported on the Si substrate; (2) Demonstrate InAs quantum-well (QWFET) device fabrication with fT > 600 GHz and fmax > 500
GHz using 80-nm-gate technology for ultra high speed low-power digital
application featuring a low calculated gate delay of 0.54 psec
(3) First develop copper metallization process for GaAs
pHEMTs and HBTs and has transferred the technology to
Win semiconductor which is the second largest III-V foundry in the world; and
(4) one of the first to demonstrate low voltage operate PHEMT for wireless
communication including enhancement-mode InGaP/AlGaAs/InGaAs pHEMT
technology using AlGaAs as spacer with higher
electron mobility and high power density of 453 mW/mm.
His current research interests include InP, GaAs based compound materials and devices (HEMT, HBT) for
wireless communication; GaN based materials (MBE,
MOCVD) for optical (LED) and electronic (HEMT) applications; III-V/ Si integration
(Ge, SiGe, GaAs,InP) for
high-speed logic applications; and advanced packaging technology (Flip chip)
for high frequency and LED applications. Besides his excellent performance in
the academic area, Dr. Chang has major contributions in semiconductor
technology for the industry in Taiwan. He has been highly recognized as the
pioneer in local compound semiconductor industry. He has graduated more than 50
graduate students and trained many engineers for the industry. Dr. Chang
received special award from The Ministry of Economic Affairs acknowledging his great
contributions in transferring advanced technologies to the industry in 2007.
And was awarded distinguished Electrical Engineering Professor by ROC
Electrical Engineer association in 2008. He has worked with world renowned companies
like Intel, Samsung, Sharp and Ulvac, Malaysia
Telecom on Nano electronics related topics in recent
years and has work with Intel on III-V/Si integration technologies in the past
four years. Dr. Chang is a senior member and a Distinguished Lecturer of the
IEEE Electronic Device Society. He is also a member of the Electrochemical Society.
Dr. Chang holds more than 20 patents worldwide and has authored or co-authored
more than 130 papers in the related research area.
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<現地連絡先>
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東京工業大学 フロンティア研究機構
岩 井 洋
〒226-8502 横浜市緑区長津田町4259
Mail-Box:J2-68
TEL:045-924-5471
FAX:045-924-5584
E-mail:iwai.h.aa@m.titech.ac.jp
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IEEE EDS Japan Chapter連絡先:Secretary 鳥居 和功
E-mail:kazuyoshi.torii@ieee.org
Home page:http://www.ieee-jp.org/section/tokyo/chapter/ED-15/
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